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FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
* * * * * High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 83.3 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with gate resistance of 25. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IB FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 4800mA VDS = 5V, IDS = 480mA IGS = -480A Min. -1.0 -5 Limit Typ. Max. 8 12 4000 -2.0 42.5 13.0 11.0 11.0 4.8 34 1.6 -3.5 6.0 1.8 80 Unit A mS V V dBm dB dB dB A % C/W C
G1dB Idsr add Rth Tch
f=1.5GHz f=2.3GHz 41.5 f=2.6GHz VDS = 10V IDS = 0.6 IDSS f=1.5GHz 12.0 (Typ.) f=2.3GHz 10.0 f=2.6GHz 10.0 VDS = 10V IDS = 0.6 IDSS (Typ.) Channel to Case 10V x Idsr x Rth -
G.C.P.: Gain Compression Point
Edition 1.1 July 1999
1
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE Total Power Dissipation (W) 100 80 60 40 20 0 50 100 150 200
Case Temperature (C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
8000 6000 4000 2000 0 2 4 6
VGS =0V -0.5V -1.0V -1.5V -2.0V
8
10
Drain-Source Voltage (V)
2
FLL200IB-1
L-Band Medium & High Power GaAs FET
S11 S22 +j100
1.2 1.3 2
+j50
1.1
+90
3
S21 S12
+j25
1GHz 2.5 1.6 1.4 1.2 1GHz 1.8 2
SCALE FOR |S12|
2
2
+j250
2.5 1.9 1.8 0.06
+j10
1 1GHz 1GHz 2.5 1.3 1.1 1.2
0
2
1.9 1.8
10
25
50 1.5
1.4
250
180 0.1
1.9 1.8
SCALE FOR |S21| 1.7
1.7
0
1.6 1.5 1.4
-j10
1.7
1.6
-j250
1.6 1.3
-j25 -j50
-j100
1.5
1.4
-90
FREQUENCY (MHZ)
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2500
S11 MAG
.888 .841 .754 .584 .353 .341 .490 .609 .680 .719 .753 .942
ANG
124.3 110.9 91.4 60.4 1.2 -87.7 -133.3 -156.4 -170.8 179.5 173.8 145.3
S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG
1.517 1.761 2.113 2.559 2.876 2.754 2.443 2.215 2.096 2.034 1.953 .563 13.5 -.2 -18.0 -42.4 -73.3 -105.9 -132.5 -156.1 -179.2 155.9 126.8 -15.5 .009 .012 .015 .019 .022 .021 .019 .017 .016 .015 .015 .006 -5.0 -17.3 -33.3 -56.8 -86.9 -119.8 -147.5 -172.2 162.7 135.4 103.5 -39.0
S22 MAG
.819 .796 .786 .790 .790 .800 .787 .764 .732 .716 .729 .451
ANG
150.3 147.5 145.9 142.7 140.7 136.5 131.6 127.5 123.4 121.2 116.4 32.7
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER VDS=10V IDS 0.6 IDSS f = 1.5 GHz
Pout
Output Power (dBm)
44 42 40 38 36 34 32
50
add
30 20
21 23 25 27 29 31 Input Power (dBm)
10
3
add (%)
40
FLL200IB-2
L-Band Medium & High Power GaAs FET
+j50
4GHz 4GHz 1.5 1.6 1.7 2.5 1.8 1.5 2 3 2.6
+j100
+j25
3.5
1.0GHz
SCALE FOR |S12|
S11 S22
+90
S21 S12
2.7
+j250
2.3 2.2 2 2.4 2.5 1.9 2.4
+j10
2.5 1
1.0GHz
2.6 2.8 2.9GHz 2.1 2.0 1.9 2.5 2.9GHz 1.7 1.8 2.1 1.9 2.0 2.7
0
3.0 3.0
10
25
50 2.8
2.1
2.0 100 2.6
250
180 0.1
2.3
0.06
0
SCALE FOR |S21|
2.7 2.2
2.9
-j10
2.9 2.8
-j250
-j25 -j50
-j100 -90
FREQUENCY (MHZ)
500 1000 1500 1700 2000 2300 2500 2700 3000 3500 4000
S11 MAG
.944 .937 .880 .791 .379 .309 .408 .480 .803 .915 .926
ANG
157.3 127.4 90.3 68.9 27.8 82.4 41.8 -43.5 -158.4 135.8 102.3
S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG
1.164 .835 1.090 1.421 2.283 2.569 2.632 2.631 .772 .030 .013 60.9 28.8 -14.0 -39.7 -100.2 179.4 128.5 55.1 -68.4 -151.4 -8.2 .004 .006 .010 .014 .025 .031 .035 .039 .012 .001 .002 -.8 -16.3 -55.4 -81.9 -147.2 128.7 78.5 6.2 -111.1 72.1 8.3
S22 MAG
.906 .855 .826 .810 .814 .789 .651 .290 .718 .937 .947
ANG
166.1 153.8 141.4 135.6 125.6 104.9 83.8 26.4 -177.7 131.5 109.9
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER VDS=10V IDS 0.6 IDSS f = 2.3 GHz
Pout
Output Power (dBm)
44 42 40 38 36 34 32
50
add
30 20
23 25 27 29 31 33 Input Power (dBm)
10
4
add (%)
40
FLL200IB-3
L-Band Medium & High Power GaAs FET
+j50
5.0 1.5GHz 5.0 4.5 4.0 2.5 2.0 2.7 3.5 3.4 3.5 3.4 3.3 3.2 3.3 3.2 2.9 3.1 3.0 2.9 2.8 10 2.7 2.6 2.5 3.0 50 2.3 2.2 100 2.8 250 2.1 3.5 2.0
+j100
8 6 2.8
+j25
4.5
+j10
4.0
1.5GHz
2.6
SCALE FOR |S12|
S11 S22
+90
S21 S12
+j250
4 2.7 2 0.06 2.6 5.0 2.7 2.6 2.5 2.9 2.3
2.9 2.6 1.5GHz
0
180 0.10
1.5GHz
3.0 0.06
0.10 0
SCALE FOR |S21|
-j10 3.1
-j250
3.1 2.0 2.2 2.1 2.0
2.5 2.4 2.3 2.2 2.1
-j25 -j50
-j100 -90
FREQUENCY (MHZ)
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
S11 MAG
.962 .933 .864 .548 .220 .214 .923 .953 .952 .953
ANG
166.6 144.9 115.5 64.6 -111.2 -85.0 178.6 150.4 131.2 113.9
S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG
1.649 1.143 1.368 2.320 3.742 4.634 .375 .065 .020 .008 63.2 30.0 -12.1 -75.5 -173.7 7.9 -118.7 -162.9 168.3 143.6 .007 .015 .031 .059 .051 .039 .017 .005 .001 .001 41.9 32.2 2.8 -50.7 -138.8 -126.8 117.2 84.4 75.2 63.7
S22 MAG
.837 .798 .726 .526 .560 .782 .898 .939 .951 .957
ANG
168.9 156.2 142.6 137.3 107.0 -128.3 166.5 147.5 133.4 119.1
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER VDS=10V IDS 0.6 IDSS f = 2.6 GHz
Pout
Output Power (dBm)
44 42 40 38 36 34 32
50
add
30 20
23 25 27 29 31 33 Input Power (dBm)
10
5
add (%)
40
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
Case Style "IB" Metal-Ceramic Hermetic Package
2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508)
12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827)
1. Gate 2. Source (Flange) 3. Drain
Unit: mm(inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
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